Mini-Circuits Absorptive SPDT, SMT Solid State Switch, 100 - 6000 MHz, 50Ω HSWA2-63DR+

Description
Mini-Circuits’ HSWA2-63DR+ is a MMIC SPDT absorptive switch with an internal driver designed for wideband operation from 100 MHz to 6.0 GHz supporting many applications requiring high performance across a wide frequency range. This model provides excellent isolation, fast switching speed and high linearity in a tiny 4x4mm 20-Lead MCLP package. Produced using a unique CMOS process on silicon, it offers the performance of GaAs with the advantages of conventional CMOS devices. HSWA2-63DR+ provides a high level of ESD protection and excellent repeatability.
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Description
Mini-Circuits’ HSWA2-63DR+ is a MMIC SPDT absorptive switch with an internal driver designed for wideband operation from 100 MHz to 6.0 GHz supporting many applications requiring high performance across a wide frequency range. This model provides excellent isolation, fast switching speed and high linearity in a tiny 4x4mm 20-Lead MCLP package. Produced using a unique CMOS process on silicon, it offers the performance of GaAs with the advantages of conventional CMOS devices. HSWA2-63DR+ provides a high level of ESD protection and excellent repeatability.
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Suppliers

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Absorptive SPDT, SMT Solid State Switch, 100 - 6000 MHz, 50Ω - HSWA2-63DR+ - Mini-Circuits
Brooklyn, NY, United States
Absorptive SPDT, SMT Solid State Switch, 100 - 6000 MHz, 50Ω
HSWA2-63DR+
Absorptive SPDT, SMT Solid State Switch, 100 - 6000 MHz, 50Ω HSWA2-63DR+
Mini-Circuits’ HSWA2-63DR+ is a MMIC SPDT absorptive switch with an internal driver designed for wideband operation from 100 MHz to 6.0 GHz supporting many applications requiring high performance across a wide frequency range. This model provides excellent isolation, fast switching speed and high linearity in a tiny 4x4mm 20-Lead MCLP package. Produced using a unique CMOS process on silicon, it offers the performance of GaAs with the advantages of conventional CMOS devices. HSWA2-63DR+ provides a high level of ESD protection and excellent repeatability.

Mini-Circuits’ HSWA2-63DR+ is a MMIC SPDT absorptive switch with an internal driver designed for wideband operation from 100 MHz to 6.0 GHz supporting many applications requiring high performance across a wide frequency range. This model provides excellent isolation, fast switching speed and high linearity in a tiny 4x4mm 20-Lead MCLP package. Produced using a unique CMOS process on silicon, it offers the performance of GaAs with the advantages of conventional CMOS devices. HSWA2-63DR+ provides a high level of ESD protection and excellent repeatability.

Supplier's Site Datasheet
RF Switches - 3157-HSWA2-63DR+CT-ND - DigiKey
Thief River Falls, MN, United States
RF Switch IC General Purpose SPDT 50Ohm 20-MLCP (4x4)

RF Switch IC General Purpose SPDT 50Ohm 20-MLCP (4x4)

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RF Switches - 3157-HSWA2-63DR+TR-ND - DigiKey
Thief River Falls, MN, United States
RF Switch IC General Purpose SPDT 50Ohm 20-MLCP (4x4)

RF Switch IC General Purpose SPDT 50Ohm 20-MLCP (4x4)

Buy Now Datasheet
RF Switches - 3157-HSWA2-63DR+DKR-ND - DigiKey
Thief River Falls, MN, United States
RF Switch IC General Purpose SPDT 50Ohm 20-MLCP (4x4)

RF Switch IC General Purpose SPDT 50Ohm 20-MLCP (4x4)

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RF Switches - HSWA2-63DR+ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switches
HSWA2-63DR+
RF Switches HSWA2-63DR+
RF Switch IC General Purpose SPDT 50Ohm 20-MLCP (4x4)

RF Switch IC General Purpose SPDT 50Ohm 20-MLCP (4x4)

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Technical Specifications

  Mini-Circuits DigiKey Quarktwin Technology Ltd.
Product Category RF Switches RF Switches RF Switches
Product Number HSWA2-63DR+ 3157-HSWA2-63DR+CT-ND HSWA2-63DR+
Product Name Absorptive SPDT, SMT Solid State Switch, 100 - 6000 MHz, 50Ω RF Switches RF Switches
Package Type Surface Mount Surface Mount; 20-VFQFN Exposed Pad Surface Mount
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Frequency Range 100 to 6000 MHz 100 to 6000 MHz 100 to 6000 MHz
Insertion Loss 0.9500 to 1.9 dB 1.6 dB 1.6 dB
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