Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPI12N50C3 SPI12N50C3

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1024981-SPI12N50C3 Current Rating: 11.6 A Length: 10.36 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 500 V Number of Elements: 1 Input Capacitance: 1.2 nF Power Dissipation: 125 W Height: 9.45 mm Number of Pins: 3 Width: 4.52 mm Rise Time: 8 ns Fall Time: 8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-262-3 Alternative Parts (Cross-Reference): IPI60R280C6XKSA1; IPI50R299CPXKSA1; SPI11N60S5; STI14NM50N; STI18N65M2; STI13NM60N; IPI65R310CFDXKSA1; IPI50R250CPXKSA1; FCI11N60SPI12N50C3HK SA1; SPI12N50C3XKSA1; Halogen Free: Halogen Free Popularity: Low Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 560 V Element Configuration: Single Max Power Dissipation: 33 W Turn-On Delay Time: 10 ns Package Quantity: 500 Continuous Drain Current (ID): 11.6 A Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 45 ns Drain to Source Resistance: 380 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 380 mΩ Max Dual Supply Voltage: 500 V On-State Resistance: 380 mΩ
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Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1024981-SPI12N50C3 Current Rating: 11.6 A Length: 10.36 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 500 V Number of Elements: 1 Input Capacitance: 1.2 nF Power Dissipation: 125 W Height: 9.45 mm Number of Pins: 3 Width: 4.52 mm Rise Time: 8 ns Fall Time: 8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-262-3 Alternative Parts (Cross-Reference): IPI60R280C6XKSA1; IPI50R299CPXKSA1; SPI11N60S5; STI14NM50N; STI18N65M2; STI13NM60N; IPI65R310CFDXKSA1; IPI50R250CPXKSA1; FCI11N60SPI12N50C3HK SA1; SPI12N50C3XKSA1; Halogen Free: Halogen Free Popularity: Low Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 560 V Element Configuration: Single Max Power Dissipation: 33 W Turn-On Delay Time: 10 ns Package Quantity: 500 Continuous Drain Current (ID): 11.6 A Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 45 ns Drain to Source Resistance: 380 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 380 mΩ Max Dual Supply Voltage: 500 V On-State Resistance: 380 mΩ
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPI12N50C3 - 1024981-SPI12N50C3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPI12N50C3
1024981-SPI12N50C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPI12N50C3 1024981-SPI12N50C3
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1024981-SPI12N50C3 Current Rating: 11.6 A Length: 10.36 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 500 V Number of Elements: 1 Input Capacitance: 1.2 nF Power Dissipation: 125 W Height: 9.45 mm Number of Pins: 3 Width: 4.52 mm Rise Time: 8 ns Fall Time: 8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-262-3 Alternative Parts (Cross-Reference): IPI60R280C6XKSA1; IPI50R299CPXKSA1; SPI11N60S5; STI14NM50N; STI18N65M2; STI13NM60N; IPI65R310CFDXKSA1; IPI50R250CPXKSA1; FCI11N60SPI12N50C3HK SA1; SPI12N50C3XKSA1; Halogen Free: Halogen Free Popularity: Low Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 560 V Element Configuration: Single Max Power Dissipation: 33 W Turn-On Delay Time: 10 ns Package Quantity: 500 Continuous Drain Current (ID): 11.6 A Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 45 ns Drain to Source Resistance: 380 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 380 mΩ Max Dual Supply Voltage: 500 V On-State Resistance: 380 mΩ

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1024981-SPI12N50C3
Current Rating: 11.6 A
Length: 10.36 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 500 V
Number of Elements: 1
Input Capacitance: 1.2 nF
Power Dissipation: 125 W
Height: 9.45 mm
Number of Pins: 3
Width: 4.52 mm
Rise Time: 8 ns
Fall Time: 8 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-262-3
Alternative Parts (Cross-Reference): IPI60R280C6XKSA1; IPI50R299CPXKSA1; SPI11N60S5; STI14NM50N; STI18N65M2; STI13NM60N; IPI65R310CFDXKSA1; IPI50R250CPXKSA1; FCI11N60SPI12N50C3HKSA1; SPI12N50C3XKSA1;
Halogen Free: Halogen Free
Popularity: Low
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Voltage Rating (DC): 560 V
Element Configuration: Single
Max Power Dissipation: 33 W
Turn-On Delay Time: 10 ns
Package Quantity: 500
Continuous Drain Current (ID): 11.6 A
Drain to Source Breakdown Voltage: 500 V
Turn-Off Delay Time: 45 ns
Drain to Source Resistance: 380 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 380 mΩ
Max Dual Supply Voltage: 500 V
On-State Resistance: 380 mΩ

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1024981-SPI12N50C3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPI12N50C3
V(BR)DSS 500 volts
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