Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1024981-SPI12N50C3
Current Rating: 11.6 A
Length: 10.36 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 500 V
Number of Elements: 1
Input Capacitance: 1.2 nF
Power Dissipation: 125 W
Height: 9.45 mm
Number of Pins: 3
Width: 4.52 mm
Rise Time: 8 ns
Fall Time: 8 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-262-3
Alternative Parts (Cross-Reference): IPI60R280C6XKSA1; IPI50R299CPXKSA1; SPI11N60S5; STI14NM50N; STI18N65M2; STI13NM60N; IPI65R310CFDXKSA1; IPI50R250CPXKSA1; FCI11N60SPI12N50C3HK
Halogen Free: Halogen Free
Popularity: Low
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Voltage Rating (DC): 560 V
Element Configuration: Single
Max Power Dissipation: 33 W
Turn-On Delay Time: 10 ns
Package Quantity: 500
Continuous Drain Current (ID): 11.6 A
Drain to Source Breakdown Voltage: 500 V
Turn-Off Delay Time: 45 ns
Drain to Source Resistance: 380 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 380 mΩ
Max Dual Supply Voltage: 500 V
On-State Resistance: 380 mΩ
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1024981-SPI12N50C3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPI12N50C3 |
| V(BR)DSS | 500 volts |