Infineon Technologies AG Single FETs, MOSFETs 64-2096PBF

Description
N-Channel 75V 160A (Tc) 300W (Tc) Surface Mount D2PAK (7-Lead)
Request a Quote Datasheet
Description
N-Channel 75V 160A (Tc) 300W (Tc) Surface Mount D2PAK (7-Lead)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 64-2096PBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
64-2096PBFTR-ND
Single FETs, MOSFETs 64-2096PBFTR-ND
N-Channel 75V 160A (Tc) 300W (Tc) Surface Mount D2PAK (7-Lead)

N-Channel 75V 160A (Tc) 300W (Tc) Surface Mount D2PAK (7-Lead)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 64-2096PBF - 1006671-64-2096PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 64-2096PBF
1006671-64-2096PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 64-2096PBF 1006671-64-2096PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1006671-64-2096PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (7-Lead) Dimension: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 160A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 260nC @ 10V Max Input Capacitance: 7580pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 110A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1006671-64-2096PBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (7-Lead)
Dimension: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 160A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 260nC @ 10V
Max Input Capacitance: 7580pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 110A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 64-2096PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
64-2096PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 64-2096PBF
MOSFET N-CH 75V 160A D2PAK

MOSFET N-CH 75V 160A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 64-2096PBFTR-ND 1006671-64-2096PBF 64-2096PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 64-2096PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-7, D2PAK (6 Leads + Tab), TO-263CB TO-263; SOT3; D2PAK (7-Lead) TO-263; TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
V(BR)DSS 75 volts
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