60 V, 300 mA N-channel Trench MOSFET in a SOT23 (TO-236AB) surface-mounted plastic package with three leads. The device has a drain-source on-state resistance of 2.8 Ω at 10 V gate-source voltage and 25 °C junction temperature, with a maximum continuous drain current of 300 mA and total power dissipation of 0.83 W. It is suited for logic level translation and high-speed line driving applications. The part meets IEC 60134 absolute maximum rating standards.
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 60V 300MA TO236AB
N-Channel 60V 300mA (Tc) 830mW (Tc) Surface Mount TO-236AB
MOSFET N-CH 60V 300MA TO236AB
MOSFET N-CH 60V 300MA TO236AB
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 2N7002,235 | 1727-2N7002,235DKR-ND | 2N7002,235 |
| Product Name | 60 V, 300 mA N-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement |
