Infineon Technologies AG 75V 80A MOSFET Transistor IPI052NE7N3G

Description
MOSFET N-CH 75V 80A TO262-3 Product overview: IPI052NE7N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 80A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPI052NE7N3G can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 75V 80A TO262-3 Product overview: IPI052NE7N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 80A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPI052NE7N3G can be used for catalog matching and distributor lookup.
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Suppliers

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Product
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Singapore
75V 80A MOSFET Transistor
285-IPI052NE7N3G
75V 80A MOSFET Transistor 285-IPI052NE7N3G
MOSFET N-CH 75V 80A TO262-3 Product overview: IPI052NE7N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 80A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPI052NE7N3G can be used for catalog matching and distributor lookup.

MOSFET N-CH 75V 80A TO262-3 Product overview: IPI052NE7N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 80A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPI052NE7N3G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI052NE7N3G - 069009-IPI052NE7N3G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI052NE7N3G
069009-IPI052NE7N3G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI052NE7N3G 069009-IPI052NE7N3G
Manufacturer: Infineon Technologies Win Source Part Number: 069009-IPI052NE7N3G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 3.8V @ 91μA Max Gate Charge: 68nC @ 10V Max Input Capacitance: 4750pF @ 37.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 069009-IPI052NE7N3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 3.8V @ 91μA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 4750pF @ 37.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-IPI052NE7N3G 069009-IPI052NE7N3G
Product Name 75V 80A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI052NE7N3G
Polarity N-Channel N-Channel; N-Channel
PD 150000 milliwatts 150000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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