Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPI052NE7N3G IPI052NE7N3G

Manufacturer: Infineon Technologies
Win Source Part Number: 069009-IPI052NE7N3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 3.8V @ 91μA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 4750pF @ 37.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 75V 80A TO262-3 Product overview: IPI052NE7N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 80A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPI052NE7N3G can be used for catalog matching and distributor lookup.