Richardson RFPD RF Power Transistor D1020UK

The D1020UK is a metal gate RF silicon FET designed for HF/VHF/UHF communications from 1 MHz to 500 MHz, featuring push-pull operation and high gain of 10 dB minimum. It is housed in a surface-mount package measuring 19.05 mm by 10.77 mm with a height of 5.71 mm and is pin-configured for dual drain and dual gate connections. The device supports a maximum drain-source breakdown voltage of 70 V, gate-source voltage of ±20 V, and a continuous drain current of 25 A per side, with power dissipation up to 389 W. Operated at 28 V, it delivers 150 W output power at 400 MHz with 50% drain efficiency and a maximum junction temperature of 200°C. Thermal resistance from junction to case is 0.45°C/W. The ceramic substrate contains beryllium oxide, requiring careful handling. It is RoHS compliant and rated for storage temperatures from -65°C to 150°C.