Richardson RFPD RF Power Transistor DU2880U

The DU2880U is an N-channel enhancement mode RF power MOSFET transistor designed for broadband operation from 2 to 175 MHz at 28 V supply, delivering 80 W saturated output power. It is housed in a ceramic package with dimensions of 24.64-24.89 mm in length, 18.29-18.54 mm in width, and 25.91-26.42 mm in height. The device features a drain-source breakdown voltage of 65 V, a maximum power dissipation of 206 W, a junction temperature rating of 200°C, and a thermal resistance of 0.85°C/W. It exhibits a power gain of 13 dB and 60% drain efficiency at 175 MHz, with a load mismatch tolerance up to 30:1 VSWR. The part is RoHS compliant.