Richardson RFPD RF Power Transistor MRF173CQ

Description
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
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Description
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Request a Quote
Datasheet
Datasheet Summary
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The MRF173CQ is an N-channel enhancement mode RF MOSFET designed for broadband power amplifier applications up to 200 MHz, particularly in FM broadcast and TV channel frequency bands. It is packaged in CASE 316-01, STYLE 2, and delivers 80 W output power at 150 MHz and 28 V drain voltage with a minimum efficiency of 55% and a gain of 11 dB. The device features low thermal resistance, nitrogen passivation for enhanced reliability, and a typical noise figure of 1.5 dB at 2.0 A and 150 MHz. It is ruggedized for operation under mismatched load conditions and supports Class A operation with simple biasing due to its gate being a DC open circuit.

Datasheet Summary
Powered by GS/AI

The MRF173CQ is an N-channel enhancement mode RF MOSFET designed for broadband power amplifier applications up to 200 MHz, particularly in FM broadcast and TV channel frequency bands. It is packaged in CASE 316-01, STYLE 2, and delivers 80 W output power at 150 MHz and 28 V drain voltage with a minimum efficiency of 55% and a gain of 11 dB. The device features low thermal resistance, nitrogen passivation for enhanced reliability, and a typical noise figure of 1.5 dB at 2.0 A and 150 MHz. It is ruggedized for operation under mismatched load conditions and supports Class A operation with simple biasing due to its gate being a DC open circuit.

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - MRF173CQ - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRF173CQ
RF Power Transistor MRF173CQ
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF MOSFET Transistors
Product Number MRF173CQ
Product Name RF Power Transistor
Output Power 80 watts
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