Richardson RFPD RF Power Transistor D2201UK

The D2201UK is a metal gate RF silicon FET designed for VHF/UHF communications from 1 MHz to 1 GHz. It is housed in a single-ended package with dimensions of 16.51 mm by 6.35 mm and features a gold metallized finish. The device has a maximum power dissipation of 17.5 W, a drain-source breakdown voltage of 40 V, and a maximum junction temperature of 200°C. It provides a minimum common source power gain of 10 dB at 1 GHz and a drain efficiency of 40% at 12.5 V and 0.1 A quiescent current. Input, output, and reverse transfer capacitances are 12 pF, 10 pF, and 1 pF respectively at 1 MHz. Thermal resistance from junction to case is 10°C/W. The ceramic portion contains beryllium oxide, requiring careful handling to avoid dust exposure.