Richardson RFPD RF Power Transistor D1008UK

The D1008UK is a metal gate silicon RF DMOS field-effect transistor designed for high-power amplification in HF to UHF communications from 1 MHz to 500 MHz. It is housed in a multi-lead package measuring 18.41 mm by 6.47 mm with a maximum operating junction temperature of 200°C and power dissipation of 175 W. The device offers minimum 13 dB common source power gain, 50% drain efficiency at 28 V and 0.4 A bias, and load mismatch tolerance up to 20:1 at 400 MHz. Drain-source breakdown voltage is 70 V per side, gate-source breakdown voltage is ±20 V, and maximum drain current is 10 A per side. Input, output, and reverse transfer capacitances are 120 pF, 60 pF, and 5 pF respectively at 1 MHz. Thermal resistance from junction to case is 1.0 °C/W. The ceramic portion contains beryllium oxide, requiring careful handling. The device is RoHS compliant.