Richardson RFPD RF Power Transistor D2214UK

The D2214UK is a metal gate RF silicon FET designed for broadband amplification up to 1 GHz in VHF/UHF communications. It comes in a hermetically sealed package with dimensions of 16.51 mm in length, 6.35 mm in width, and 1.52 mm in height, featuring a gold metallized finish and a metal flange. The device supports a maximum drain-source voltage of 40 V, a drain current of 8 A, and power dissipation of 42 W, with a maximum junction temperature of 200°C. It provides a minimum power gain of 10 dB, drain efficiency of 40% at 12.5 V and 0.4 A, and input, output, and reverse transfer capacitances of 48 pF, 40 pF, and 4 pF respectively at 1 MHz. The part is RoHS compliant, but contains toxic beryllium oxide ceramic in the insulation between leads and flange. Thermal resistance from junction to case is 4.2°C/W.