Richardson RFPD RF Power Transistor D1005UK

The D1005UK is a metal gate RF silicon FET designed for HF/VHF communications from 1 MHz to 175 MHz, delivering 80 W output power at 28 V with minimum 16 dB gain. It is packaged in a single-ended, gold metallized case measuring 24.76 mm by 18.42 mm with a 6.35 mm pin pitch and includes a beryllium oxide ceramic insulator requiring careful handling. The device features low input capacitance of 240 pF and output capacitance of 100 pF, a maximum junction temperature of 200°C, and a thermal resistance of 1.2°C/W. It operates with a drain-source breakdown voltage of 70 V and gate-source breakdown voltage of ±20 V, and meets RoHS compliance. The FET supports simplified amplifier design with low noise, simple bias circuits, and high tolerance to load mismatch up to 20:1 VSWR at 175 MHz.