Richardson RFPD RF Power Transistor D1011UK

The D1011UK is a silicon RF DMOS FET in an SO8 package, measuring 4.06 mm by 5.08 mm by 1.27 mm, designed for broadband RF amplification from 1 MHz to 1 GHz. It delivers a minimum gain of 13 dB at 500 MHz with a drain efficiency of 50% under 28 V bias and 0.1 A quiescent current. The device supports a maximum drain-source voltage of 70 V, a continuous drain current of 5 A, and power dissipation of 30 W, with a maximum operating junction temperature of 200°C. Input, output, and reverse transfer capacitances are 60 pF, 30 pF, and 2.5 pF respectively at 1 MHz. It features a low saturation resistance of 1 Ω and high load mismatch tolerance up to 20:1 VSWR at 500 MHz. The part is RoHS compliant and features gold metallization.