Richardson RFPD RF Power Transistor D2229UK

The D2229UK is a metal gate RF silicon FET designed for HF/VHF/UHF communications from 1 MHz to 2 GHz. It is packaged in a CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC package with dimensions of 1.27 mm x 1.27 mm per pin, 2.5 mm x 1.25 mm overall, and 4.90 mm overall height. The device has a maximum power dissipation of 17.5 W, a drain-source breakdown voltage of 40 V, and a maximum junction temperature of 200°C. It offers minimum 10 dB common source power gain, 40% drain efficiency at 12.5 V and 0.1 A, and input, output, and reverse transfer capacitances of 12 pF, 10 pF, and 1 pF respectively at 1 MHz. Thermal resistance from junction to case is max 10°C/W. The part is RoHS compliant and rated for operation from -65 to 150°C storage temperature.