Richardson RFPD RF Power Transistor D1010UK

The D1010UK is a metal gate RF silicon FET designed for push-pull amplifier applications in HF/VHF/UHF communications from 1 MHz to 500 MHz. It is housed in a ceramic package with a metal flange, measuring 19.05 mm by 10.77 mm by 45° with a 27.94 mm lead span. The device supports a maximum drain-source breakdown voltage of 70 V per side, a maximum drain current of 20 A per side, and a maximum junction temperature of 200°C. It provides a minimum power gain of 10 dB and a drain efficiency of 50% at 28 V and 2 A quiescent current. The input capacitance is 240 pF, output capacitance is 100 pF, and reverse transfer capacitance is 10 pF at 1 MHz. Thermal resistance from junction to case is 0.45°C/W. The device includes a beryllium oxide ceramic insulator and complies with RoHS.