The D2013UK is a metal gate RF silicon FET designed for broadband amplifier applications from 1 MHz to 2 GHz. It is housed in a ceramic package with a metal flange, measuring 18.41 mm in length, 6.47 mm in width, and 6.45 mm in height. The device supports a maximum drain-source breakdown voltage of 65 V, a gate-source breakdown voltage of ±20 V, and a continuous drain current of 4 A per side. It delivers a minimum power gain of 10 dB at 20 W output power and 40% drain efficiency at 28 V drain voltage. The thermal resistance from junction to case is 2.1°C/W. The ceramic portion contains beryllium oxide, requiring careful handling to avoid dust exposure.
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| Richardson RFPD | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | D2013UK |
| Product Name | RF Power Transistor |
| Output Power | 20 watts |
