Richardson RFPD RF Power Transistor D2213UK

The D2213UK is a DMOS RF silicon FET designed for push-pull amplifier applications in HF/VHF/UHF communications from 1 MHz to 2 GHz. It is housed in a metal package with dimensions of 18.41 mm length, 6.47 mm width, and 6.45 mm height, featuring gold metallization and a ceramic flange containing beryllium oxide. The device supports a maximum drain-source voltage of 40 V, gate-source voltage of ±20 V, and continuous drain current of 8 A per side, with a power dissipation of 83 W and maximum junction temperature of 200°C. It provides minimum 10 dB power gain at 20 W output, 40% drain efficiency at 12.5 V and 0.8 A, and load mismatch tolerance of 20:1 at 1 GHz. Thermal resistance from junction to case is 2.1 °C/W.