Richardson RFPD RF Power Transistor AFV121KHR5

Description
This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. This device is suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM.
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Description
This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. This device is suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM.
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Datasheet
Datasheet Summary
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The AFV121KHR5 is an RF power LDMOS transistor designed for pulse applications from 960 to 1215 MHz, used in air traffic control systems, distance measuring equipment, and transponders. It is packaged in the NI-1230H-4S earless plastic housing with a 35 mm × 25 mm footprint and a 4.5 mm height. The device operates at up to 50 V drain-source voltage, handles VSWR greater than 20:1 with no degradation, and maintains a junction temperature up to 225 °C. It features internal input and output matching, integrated ESD protection passing 2500 V human body model, and operates in single-ended, push-pull, or quadrature configurations. Thermal impedance is 0.017 °C/W at 1000 W peak, 128 µs pulse, 10% duty cycle.

Datasheet Summary
Powered by GS/AI

The AFV121KHR5 is an RF power LDMOS transistor designed for pulse applications from 960 to 1215 MHz, used in air traffic control systems, distance measuring equipment, and transponders. It is packaged in the NI-1230H-4S earless plastic housing with a 35 mm × 25 mm footprint and a 4.5 mm height. The device operates at up to 50 V drain-source voltage, handles VSWR greater than 20:1 with no degradation, and maintains a junction temperature up to 225 °C. It features internal input and output matching, integrated ESD protection passing 2500 V human body model, and operates in single-ended, push-pull, or quadrature configurations. Thermal impedance is 0.017 °C/W at 1000 W peak, 128 µs pulse, 10% duty cycle.

Suppliers

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Description
Supplier Links
RF Power Transistor - AFV121KHR5 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
AFV121KHR5
RF Power Transistor AFV121KHR5
This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. This device is suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM.

This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. This device is suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number AFV121KHR5
Product Name RF Power Transistor
Package Type Ceramic Flanged
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