The A5G26H605W19N is an 85 W asymmetrical Doherty RF power GaN amplifier designed for cellular base station applications requiring wide instantaneous bandwidth in the 2496 MHz to 2690 MHz frequency range. It is housed in an OM-780-4S4S plastic package with an exposed source terminal on the backside. The device operates with a 48 Vdc drain supply voltage and achieves a typical power gain of 15.1 dB at 2620 MHz with 52.5% drain efficiency under W-CDMA conditions. It supports input signal peak-to-average power ratios up to 9.9 dB and maintains adjacent channel power ratio performance of -30.0 dBc or better across the band. The amplifier exhibits robustness against high output VSWR and is tested for ESD performance per Human Body Model Class 1B and Charge Device Model C3. It meets moisture sensitivity level 3 per JESD22-A113 and operates within a case temperature range of -55 °C to +150 °C.
The A5G26H605W19N is an 85 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. The A5G26H605W19N has high terminal impedances for optimal broadband performance and improved linearized error vector magnitude with next generation 5G signals. The A5G26H605W19N is able to withstand extremely high level output VSWR and broadband operating conditions.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | A5G26H605W19NR3 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
