The A5G21H605W19NR3 is an 85 W asymmetrical Doherty RF power GaN amplifier in an OM-780-4S4S plastic package, designed for cellular base station applications with wide instantaneous bandwidth operation from 2110 MHz to 2200 MHz. It operates at a recommended drain voltage of 48 Vdc, achieves 56.1% drain efficiency at 2110 MHz under W-CDMA signal conditions, and withstands high output VSWR and broadband operating conditions. The device meets moisture sensitivity level 3 per JESD22-A113 and J-STD-020 with a peak reflow temperature of 245 °C. Thermal resistance from channel to case is 0.8 °C/W. The device is not automotive qualified.
The A5G21H605W19 is a 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz. This part is characterized and performance is guaranteed for applications operating in the 2110 to 2200 MHz band.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | A5G21H605W19NR3 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
