The A2T09D400-23NR6 is a 93 W symmetrical Doherty RF power LDMOS transistor designed for cellular base station applications operating in the 716 to 960 MHz frequency range. It is packaged in an OM-1230-4L2S plastic case with an exposed source terminal on the backside. The device operates with a drain-source voltage up to 70 Vdc and a gate-source voltage range of -6.0 to +10 Vdc. It has a junction-to-case thermal resistance of 0.29 °C/W and can operate with a junction temperature up to 225 °C. The transistor meets ESD protection standards of Human Body Model Class 2, Machine Model Class B, and Charge Device Model Level IV. It is rated for moisture sensitivity level 3 per J-STD-020 and is tested in a symmetrical Doherty configuration for single-carrier W-CDMA applications with Pout = 93 W avg. at 28 Vdc.
This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | A2T09D400-23NR6 |
| Product Name | RF Power Transistor |
| Package Type | Plastic Flangeless |
