Texas Instruments CSD23382F4 P-Channel NexFET Power MOSFET CSD23382F4

Description
P-Channel NexFET Power MOSFET 3-PICOSTAR 0 to 0
Request a Quote Datasheet
Description
P-Channel NexFET Power MOSFET 3-PICOSTAR 0 to 0
Request a Quote Datasheet

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Company
Product
Description
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CSD23382F4 P-Channel NexFET Power MOSFET - CSD23382F4 - Texas Instruments
Dallas, TX, United States
CSD23382F4 P-Channel NexFET Power MOSFET
CSD23382F4
CSD23382F4 P-Channel NexFET Power MOSFET CSD23382F4
P-Channel NexFET Power MOSFET 3-PICOSTAR 0 to 0

P-Channel NexFET Power MOSFET 3-PICOSTAR 0 to 0

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD23382F4 - 1030668-CSD23382F4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD23382F4
1030668-CSD23382F4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD23382F4 1030668-CSD23382F4
Manufacturer: Texas Instruments Win Source Part Number: 1030668-CSD23382F4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 3-PICOSTAR Dimension: 3-XFDFN Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 1.35nC @ 6V Max Input Capacitance: 235pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 76 mOhm @ 500mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 1030668-CSD23382F4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-PICOSTAR
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 1.35nC @ 6V
Max Input Capacitance: 235pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 76 mOhm @ 500mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 296-40003-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-40003-2-ND
Single FETs, MOSFETs 296-40003-2-ND
P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

Buy Now Datasheet
Single FETs, MOSFETs - 296-40003-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-40003-6-ND
Single FETs, MOSFETs 296-40003-6-ND
P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

Buy Now Datasheet
Single FETs, MOSFETs - 296-40003-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-40003-1-ND
Single FETs, MOSFETs 296-40003-1-ND
P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

Buy Now Datasheet
 - CSD23382F4 - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, -3.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Small Signal Field-Effect Transistor, -3.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Single FETs, MOSFETs - CSD23382F4 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
CSD23382F4
Single FETs, MOSFETs CSD23382F4
MOSFET P-CH 12V 3.5A 3PICOSTAR

MOSFET P-CH 12V 3.5A 3PICOSTAR

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD23382F4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD23382F4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD23382F4
MOSFET P-CH 12V 3.5A 3PICOSTAR

MOSFET P-CH 12V 3.5A 3PICOSTAR

Supplier's Site

Technical Specifications

  Texas Instruments Win Source Electronics DigiKey Rochester Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number CSD23382F4 1030668-CSD23382F4 296-40003-2-ND CSD23382F4 CSD23382F4 CSD23382F4
Product Name CSD23382F4 P-Channel NexFET Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD23382F4 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS -12 volts 12 volts 12 volts
rDS(on) 0.0760 ohms
IDSS -22000 milliamps 3500 milliamps
QG 1.04 nC
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