P-Channel NexFET Power MOSFET 3-PICOSTAR 0 to 0
P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
MOSFET P-CH 12V 3.5A 3PICOSTAR
Small Signal Field-Effect Transistor, -3.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
-12V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 76mOhm 3-PICOSTAR 0 to 0 Product overview: CSD23382F4 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -12V, 76mOhm, LGA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, 76mOhm, LGA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD23382F4 can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 1030668-CSD23382F4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-PICOSTAR
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 1.35nC @ 6V
Max Input Capacitance: 235pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 76 mOhm @ 500mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
MOSFET P-CH 12V 3.5A 3PICOSTAR
| Texas Instruments | DigiKey | ODG (Origin Data Global) | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD23382F4 | 296-40003-2-ND | CSD23382F4 | CSD23382F4 | 278-CSD23382F4 | 1030668-CSD23382F4 | CSD23382F4 |
| Product Name | CSD23382F4 P-Channel NexFET Power MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | -12V 76mOhm LGA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD23382F4 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||
| V(BR)DSS | -12 volts | 12 volts | 12 volts | ||||
| rDS(on) | 0.0760 ohms | ||||||
| IDSS | -22000 milliamps | 3500 milliamps | |||||
| QG | 1.04 nC |
