N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150
N-CH Power MOSFET 25V 60A VSON-CLIP EP SMT Product overview: CSD16323Q3 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD16323Q3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 25V 21A/60A 8VSON
N-Channel 25V 21A (Ta), 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
N-Channel 25V 21A (Ta), 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
N-Channel 25V 21A (Ta), 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
Manufacturer: Texas Instruments
Win Source Part Number: 013347-CSD16323Q3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Family Name: CSD16323Q3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SON Exposed Pad (3x3)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 21A (Ta), 60A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 8.4nC @ 4.5V
Max Input Capacitance: 1300pF @ 12.5V
Maximum Gate-Source Voltage: +10V, -8V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 24A, 8V
Alternative Parts (Cross-Reference): MCP87055T-U/LC; DMT2004UFG-13; DMT2004UFG-7; BSZ060NE2LS;
Introduction Date: May 21, 2009
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2031
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
MOSFET, N CH, 25V, 60A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0044ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V; Power DissipationRoHS Compliant: Yes
| Texas Instruments | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD16323Q3 | 278-CSD16323Q3 | CSD16323Q3 | 296-24522-1-ND | 013347-CSD16323Q3 | CSD16323Q3 | 28AH2082 |
| Product Name | CSD16323Q3 N-Channel NexFET? Power MOSFET | 25V 60A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16323Q3 | MOSFET | Mosfet, N Ch, 25V, 60A, 8Son; Transistor Polarity Texas Instruments |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | 25 volts | |||
| rDS(on) | 0.0055 ohms | 0.0044 ohms | |||||
| IDSS | 112000 milliamps | 21000 milliamps | 60000 milliamps | ||||
| QG | 6.2 nC |