Texas Instruments CSD19531KCS 100V, 6.4mOhm, TO-220 NexFET™ Power MOSFET CSD19531KCS

Description
100V, 6.4mOhm, TO-220 NexFET™ Power MOSFET 3-TO-220 -55 to 175
Request a Quote Datasheet
Description
100V, 6.4mOhm, TO-220 NexFET™ Power MOSFET 3-TO-220 -55 to 175
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
CSD19531KCS 100V, 6.4mOhm, TO-220 NexFET™ Power MOSFET - CSD19531KCS - Texas Instruments
Dallas, TX, United States
CSD19531KCS 100V, 6.4mOhm, TO-220 NexFET™ Power MOSFET
CSD19531KCS
CSD19531KCS 100V, 6.4mOhm, TO-220 NexFET™ Power MOSFET CSD19531KCS
100V, 6.4mOhm, TO-220 NexFET™ Power MOSFET 3-TO-220 -55 to 175

100V, 6.4mOhm, TO-220 NexFET™ Power MOSFET 3-TO-220 -55 to 175

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19531KCS - 202953-CSD19531KCS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19531KCS
202953-CSD19531KCS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19531KCS 202953-CSD19531KCS
Manufacturer: Texas Instruments Win Source Part Number: 202953-CSD19531KCS Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 214W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 100A (Ta) Gate-Source Threshold Voltage: 3.3V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 3870pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.7 mOhm @ 60A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Texas Instruments
Win Source Part Number: 202953-CSD19531KCS
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 214W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 100A (Ta)
Gate-Source Threshold Voltage: 3.3V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 3870pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.7 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - CSD19531KCS - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
CSD19531KCS
Single FETs, MOSFETs CSD19531KCS
MOSFET N-CH 100V 100A TO220-3

MOSFET N-CH 100V 100A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 296-37480-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-37480-5-ND
Single FETs, MOSFETs 296-37480-5-ND
N-Channel 100V 100A (Ta) 214W (Tc) Through Hole TO-220-3

N-Channel 100V 100A (Ta) 214W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD19531KCS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD19531KCS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD19531KCS
MOSFET N-CH 100V 100A TO220-3

MOSFET N-CH 100V 100A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V 6.4mOhm Pwr MOSFET

MOSFET 100V 6.4mOhm Pwr MOSFET

Buy Now Datasheet
Mosfet, N Channel, 100V, 100A, To-220-3; Transistor Polarity Texas Instruments - 29AH3844 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 100A, To-220-3; Transistor Polarity Texas Instruments
29AH3844
Mosfet, N Channel, 100V, 100A, To-220-3; Transistor Polarity Texas Instruments 29AH3844
MOSFET, N CHANNEL, 100V, 100A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; PowerRoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 100A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; PowerRoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Texas Instruments Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number CSD19531KCS 202953-CSD19531KCS CSD19531KCS 296-37480-5-ND CSD19531KCS CSD19531KCS 29AH3844
Product Name CSD19531KCS 100V, 6.4mOhm, TO-220 NexFET™ Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19531KCS Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Channel, 100V, 100A, To-220-3; Transistor Polarity Texas Instruments
V(BR)DSS 100 volts 100 volts 100 volts
IDSS 122000 milliamps 100000 milliamps 100000 milliamps
QG 38 nC
Package Type TO-220 TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
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