- Trained on our vast library of engineering resources.
Qorvo's UJ3C065030K3S 650 V, 27 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. Available in the TO-247-3L package, this device exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
MOSFET 650V/30mOhm SiC CASCODE G3
N-Channel 650V 85A (Tc) 441W (Tc) Through Hole TO-247-3
MOSFET N-CH 650V 85A TO247-3
SIC SCHOTTKY DIODE, 650V, 85A, TO-247 ROHS COMPLIANT: YES
| Qorvo | VAST STOCK CO., LIMITED | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Transistors |
| Product Number | UJ3C065030K3S | UJ3C065030K3S | 2312-UJ3C065030K3S-ND | UJ3C065030K3S | 47AK1769 |
| Product Name | 650 V, 27 mohm SiC FET | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Sic Schottky Diode, 650V, 85A, To-247 Rohs Compliant Unitedsic |
| Transistor Technology / Material | 650 V, 27 mohm SiC FET |
