Qorvo 0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor TGF2965-SM

Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V Product overview: TGF2965-SM from Qorvo is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30MHZ, 3GHz, 5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30MHZ, 3GHz, 5W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TGF2965-SM can be used for catalog matching and distributor lookup.

.03-3GHZ,5W,32V,50OHM GAN RF I/P