The QPD1017 is a 450 W GaN RF IMFET intended for military and civilian radar systems, operating at 3.1 to 3.5 GHz with a 50 V drain supply. It is housed in an air cavity package measuring 17.40 x 24.00 x 4.31 mm and is RoHS compliant. The device provides a typical linear gain of 16.5 dB and power-added efficiency of 60% at 3.3 GHz, with a pulsed power capability under 100 µs pulse width and 10% duty cycle. Thermal resistance from junction to case is 0.33 °C/W. The part is insensitive to VSWR up to 10:1 and is rated for operating temperatures from −40 °C to +85 °C. It meets ESD standards per ANSI/ESDA/JEDEC JS-001 and JS-002, and has a moisture sensitivity level of MSL 3 per IPC/JEDEC J-STD-020.
GaN FETs 3.1-3.5 GHz,450W,50V GaN RF IMFET Product overview: QPD1017 from Qorvo is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.5 GHz, 450W, 50V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3.5 GHz, 450W, 50V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-QPD1017 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-QPD1017 |
| Product Name | 3.5 GHz 450W 50V MOSFET Transistor |
| Polarity | N-Channel |
