Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 4 x 3 mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant. Evaluation boards are available upon request.
DC-12 GHZ, 25W, 32V GAN RF TR
RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
| Qorvo | DigiKey | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | Transistors |
| Product Number | TGF2979-SM | 2312-TGF2979-SM-ND | TGF2979-SM |
| Product Name | DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor | RF FETs, MOSFETs | RF JFET Transistors |
| Transistor Technology / Material | DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor | ||
| Transistor Grade / Operating Range | Military | ||
| Package Type | QFN | 20-VFQFN Exposed Pad |
