Qorvo DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor QPD1015

Description
Qorvo's QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
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Description
Qorvo's QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015 - Qorvo
Greensboro, NC, United States
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor
QPD1015
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor QPD1015
Qorvo's QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.

Qorvo's QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-QPD1015-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-QPD1015-ND
RF FETs, MOSFETs 2312-QPD1015-ND
DC-3.7 GHZ, 65W, 50V GAN RF PWR

DC-3.7 GHZ, 65W, 50V GAN RF PWR

Buy Now Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
QPD1015
RF JFET Transistors QPD1015
RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN

RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN

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Technical Specifications

  Qorvo DigiKey VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Transistors
Product Number QPD1015 2312-QPD1015-ND QPD1015
Product Name DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor RF FETs, MOSFETs RF JFET Transistors
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360 2-FlatPack, Fin Leads
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