Qorvo DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor QPD1009

The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN Product overview: QPD1009 from Qorvo is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4GHz, 15W, 50V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4GHz, 15W, 50V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-QPD1009 can be used for catalog matching and distributor lookup.

DC-4 GHZ, 15W, 50V GAN RF TR