Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
DC-4 GHZ, 10W, 50V GAN RF TR
RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
| Qorvo | DigiKey | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | Transistors |
| Product Number | QPD1010 | 2312-QPD1010-ND | QPD1010 |
| Product Name | DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor | RF FETs, MOSFETs | RF JFET Transistors |
| Transistor Technology / Material | DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor | ||
| Transistor Grade / Operating Range | Military | ||
| Package Type | QFN | 16-VFQFN Exposed Pad |
