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Qorvo DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor QPD1010

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DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor - QPD1010 - Qorvo
Greensboro, NC, United States
DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor
QPD1010
DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor QPD1010
Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request.

Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
QPD1010
RF JFET Transistors QPD1010
RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN

RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN

Supplier's Site Datasheet

Technical Specifications

  Qorvo VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number QPD1010 QPD1010
Product Name DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor RF JFET Transistors
Transistor Technology / Material DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type QFN
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