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Qorvo 1700 V, 410 mohm SiC FET UF3C170400K3S

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1700 V, 410 mohm SiC FET - UF3C170400K3S - Qorvo
Greensboro, NC, United States
1700 V, 410 mohm SiC FET
UF3C170400K3S
1700 V, 410 mohm SiC FET UF3C170400K3S
Qorvo's UF3C170400K3S 1700 V, 410 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

Qorvo's UF3C170400K3S 1700 V, 410 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

Supplier's Site Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UF3C170400K3S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UF3C170400K3S
SICFET N-CH 1700V 7.6A TO247-3

SICFET N-CH 1700V 7.6A TO247-3

Supplier's Site
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UF3C170400K3S-ND
Single FETs, MOSFETs 2312-UF3C170400K3S-ND
N-Channel 1700V 7.6A (Tc) 100W (Tc) Through Hole TO-247-3

N-Channel 1700V 7.6A (Tc) 100W (Tc) Through Hole TO-247-3

Supplier's Site Datasheet
Sic Schottky Diode, 1.7Kv, 7.6A, To-247 Rohs Compliant Unitedsic - 47AK1763 - Newark, An Avnet Company
Chicago, IL, United States
Sic Schottky Diode, 1.7Kv, 7.6A, To-247 Rohs Compliant Unitedsic
47AK1763
Sic Schottky Diode, 1.7Kv, 7.6A, To-247 Rohs Compliant Unitedsic 47AK1763
SIC SCHOTTKY DIODE, 1.7KV, 7.6A, TO-247 ROHS COMPLIANT: YES

SIC SCHOTTKY DIODE, 1.7KV, 7.6A, TO-247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Qorvo Acme Chip Technology Co., Limited DigiKey Newark, An Avnet Company
Product Category RF Transistors RF Transistors Transistors Transistors
Product Number UF3C170400K3S UF3C170400K3S 2312-UF3C170400K3S-ND 47AK1763
Product Name 1700 V, 410 mohm SiC FET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs Sic Schottky Diode, 1.7Kv, 7.6A, To-247 Rohs Compliant Unitedsic
Transistor Technology / Material 1700 V, 410 mohm SiC FET
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