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Qorvo DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor T2G6001528-Q3

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DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor - T2G6001528-Q3 - Qorvo
Greensboro, NC, United States
DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor
T2G6001528-Q3
DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor T2G6001528-Q3
Qorvo's T2G6001528-Q3 is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant. Evaluation boards are available upon request.

Qorvo's T2G6001528-Q3 is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant. Evaluation boards are available upon request.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
T2G6001528-Q3
RF JFET Transistors T2G6001528-Q3
RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN

RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN

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Technical Specifications

  Qorvo VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number T2G6001528-Q3 T2G6001528-Q3
Product Name DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor RF JFET Transistors
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-200
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