Richardson RFPD RF Power Transistor D2230UK

The D2230UK is a metal gate RF silicon FET designed for HF/VHF/UHF communications from 1 MHz to 2 GHz. It is housed in a F-0127 ceramic package with dimensions of 5.50 mm ± 0.15 mm in length and 2.313 mm in height. The device supports a maximum drain-source breakdown voltage of 40 V, a gate-source breakdown voltage of ±20 V, and a continuous drain current of 4 A. It dissipates up to 17.5 W with a maximum junction temperature of 200°C. Thermal resistance from junction to case is 6°C/W. Electrical performance includes a minimum power gain of 10 dB, drain efficiency of 40% at 12.5 V and 0.2 A, and low input, output, and reverse transfer capacitances of 24 pF, 20 pF, and 2 pF respectively, all measured at 1 MHz. Input and output pins are configured for single-ended operation with bonded sources and drains.