Richardson RFPD RF Power Transistor D2006UK

The D2006UK is a metal gate RF silicon FET designed for broadband amplifier applications from DC to 2 GHz. It features a ceramic package with a metal flange, measuring 18.41 mm in length, 16.51 mm in width, and 6.47 mm in height. The device supports push-pull operation with minimum common source power gain of 13 dB and drain efficiency of 40% at 28 V and 0.6 A. It operates with a maximum junction temperature of 200°C and a thermal resistance of 2.5°C/W. Breakdown voltage is 65 V for drain-source and ±20 V for gate-source. Input, output, and reverse transfer capacitances are 36 pF, 18 pF, and 1.5 pF respectively at 1 MHz. It is RoHS compliant and contains beryllium oxide in the ceramic insulator, requiring careful handling to avoid dust exposure.