The D1028UK is a metal gate RF silicon FET designed for VHF/UHF communications from 1 MHz to 200 MHz, offering 300W output power at 175MHz with a minimum gain of 13 dB and 60% drain efficiency. It features a dual-drain, dual-gate configuration with pins for common source, two drains, and two gates, housed in a package measuring 19.05 mm by 10.77 mm with a maximum height of 22.22 mm. The device supports push-pull operation, has a maximum junction temperature of 200°C, and a thermal resistance of 0.4°C/W. It meets ROHS compliance and contains beryllium oxide in the ceramic insulation, requiring careful handling. The input and output capacitances are 360 pF and 180 pF respectively at 1 MHz, and it tolerant to a 20:1 VSWR load mismatch.
300W, 13dB gain @175MHz. The leading MOSFET for high linearity transmitters.
| Richardson RFPD | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | D1028UK |
| Product Name | RF Power Transistor |
| Output Power | 300 watts |
