The D2004UK is a metal gate RF silicon FET designed for HF/VHF/UHF communications from DC to 2 GHz, featuring push-pull operation and high gain of at least 10 dB. It is housed in a ceramic package with a metal flange, measuring 18.41 mm in length, 6.47 mm in width, and 1.65R mm in height. The device supports a maximum drain-source breakdown voltage of 65 V, gate-source breakdown voltage of ±20 V, and continuous drain current of 2 A per side, with a maximum junction temperature of 200°C and power dissipation of 58 W. Thermal resistance from junction to case is 3.0°C/W. The part meets RoHS compliance. Beryllium oxide is present in the ceramic substrate, requiring careful handling to avoid dust exposure.
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| Richardson RFPD | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | D2004UK |
| Product Name | RF Power Transistor |
| Output Power | 10 watts |