Richardson RFPD RF Power Transistor MRF166W

Description
Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.
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Description
Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.
Request a Quote
Datasheet
Datasheet Summary
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The MRF166W is an N-channel enhancement mode RF MOSFET designed for wideband large-signal output and driver stages from 30 to 500 MHz. It operates at 28 Vdc and delivers 40 W output power with 14 dB gain at 500 MHz, and 60% efficiency at 175 MHz. The device is housed in a CASE 412-01, Style 1 package and is 100% tested for load mismatch at all phase angles with a 30:1 VSWR. It features a low gate-drain capacitance of 4.0 pF at VDS = 28 V and is suited for Class A operation with excellent thermal stability. The part supports manual gain control, ALC, and modulation techniques.

Datasheet Summary
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The MRF166W is an N-channel enhancement mode RF MOSFET designed for wideband large-signal output and driver stages from 30 to 500 MHz. It operates at 28 Vdc and delivers 40 W output power with 14 dB gain at 500 MHz, and 60% efficiency at 175 MHz. The device is housed in a CASE 412-01, Style 1 package and is 100% tested for load mismatch at all phase angles with a 30:1 VSWR. It features a low gate-drain capacitance of 4.0 pF at VDS = 28 V and is suited for Class A operation with excellent thermal stability. The part supports manual gain control, ALC, and modulation techniques.

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - MRF166W - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRF166W
RF Power Transistor MRF166W
Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.

Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF MOSFET Transistors
Product Number MRF166W
Product Name RF Power Transistor
Output Power 40 watts
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