Richardson RFPD RF Power Transistor D2001UK

The D2001UK is a gold metallized, single-ended RF silicon DMOS FET designed for VHF/UHF communications from 50 MHz to 1 GHz. It is housed in a 3-pin package with dimensions of 16.51 mm x 6.35 mm x 45° bevel, and features a metal flange with a beryllium oxide ceramic insulator. The device supports a maximum power dissipation of 17.5 W, a drain-source breakdown voltage of 65 V, and a maximum junction temperature of 200°C. It delivers a minimum gain of 13 dB at 2.5 W output power and 28 V drain bias, with a drain efficiency of 40%. Input, output, and reverse transfer capacitances are 12 pF, 6 pF, and 0.5 pF respectively at 1 MHz. The part meets RoHS compliance and has a thermal resistance junction-to-case of 10°C/W. Hazardous beryllium oxide content requires special handling to avoid dust exposure.