OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Summary of Features
Potential Applications
MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3
Manufacturer: Infineon Technologies
Win Source Part Number: 776843-IPB035N08N3 G
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: PG-TO263-2
Channel Type Type: N
Drain Source Voltage: 80V
Vgs(th) (Maximum) @ Id: 3.5V @ 155μA
Gate Charge (Qg) (Maximum) @ Vgs: 117nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 8110pF @ 40V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 214W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
OptiMOSâ„¢ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS . Optimized technology for DC/DC converters . Qualified according to JEDEC1) for target applications . N-channel, logic level . Excellent gate charge x R DS(on) product (FOM) . Very low on-resistance R DS(on) . Pb-free plating
Channel Type = N
Maximum Continuous Drain Current = 100 A
Maximum Drain Source Voltage = 80 V
Maximum Drain Source Resistance = 6 mOhms
Maximum Gate Threshold Voltage = 3.5V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Pin Count = 3
Delivery on production packaging - Reel. This product is non-returnable.
OptiMOSâ„¢ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS . Optimized technology for DC/DC converters . Qualified according to JEDEC1) for target applications . N-channel, logic level . Excellent gate charge x R DS(on) product (FOM) . Very low on-resistance R DS(on) . Pb-free plating
Channel Type = N
Maximum Continuous Drain Current = 100 A
Maximum Drain Source Voltage = 80 V
Maximum Drain Source Resistance = 6 mOhms
Maximum Gate Threshold Voltage = 3.5V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Pin Count = 3
| Infineon Technologies AG | VAST STOCK CO., LIMITED | Win Source Electronics | RS Components, Ltd. | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB035N08N3 G | IPB035N08N3 G | 776843-IPB035N08N3 G | 1107150P |
| Product Name | N-Channel Power MOSFET | MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB035N08N3 G | |
| Polarity | N-Channel; N | N-Channel | ||
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.0035 ohms | 0.0060 ohms | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
