P-channel enhancement mode Field-Effect Transistor (FET), -20 V, TSOP-6
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Summary of Features
Benefits
Potential Applications
The Infineon OptiMOS⢠P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode. Avalanche rated. Low switching and conduction power losses. Pb-free lead plating, RoHS compliant. Standard packages. OptiMOS⢠P-Channel Series: Temperature range from -55°C to +175°C
Channel Type = P
Maximum Continuous Drain Current = 4.7 A
Maximum Drain Source Voltage = 20 V
Maximum Drain Source Resistance = 110 mOhms
Maximum Gate Threshold Voltage = 1.2V
Minimum Gate Threshold Voltage = 0.6V
Maximum Gate Source Voltage = -12 V, +12 V
Package Type = TSOP
Mounting Type = Surface Mount
Pin Count = 6
The Infineon OptiMOS⢠P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode. Avalanche rated. Low switching and conduction power losses. Pb-free lead plating, RoHS compliant. Standard packages. OptiMOS⢠P-Channel Series: Temperature range from -55°C to +175°C
Channel Type = P
Maximum Continuous Drain Current = 4.7 A
Maximum Drain Source Voltage = 20 V
Maximum Drain Source Resistance = 110 mOhms
Maximum Gate Threshold Voltage = 1.2V
Minimum Gate Threshold Voltage = 0.6V
Maximum Gate Source Voltage = -12 V, +12 V
Package Type = TSOP
Mounting Type = Surface Mount
Pin Count = 6
Delivery on production packaging - Reel. This product is non-returnable.
Integrated Circuits (ICs) - Transistors - MOSFETs
P-Channel 20V 4.7A (Ta) 2W (Ta) Surface Mount PG-TSOP6-6
Manufacturer: Infineon Technologies
Win Source Part Number: 1154743-BSL211SP
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Infineon Technologies AG | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | DigiKey | Win Source Electronics | |
---|---|---|---|---|---|
Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | RF Transistors |
Product Number | BSL211SP | 8922169 | BSL211SP | BSL211SPINTR-ND | 1154743-BSL211SP |
Product Name | Small Signal/Small Power MOSFET | Integrated Circuits (ICs) - Transistors - MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSL211SP | |
Polarity | P-Channel; P | P-Channel | P-Channel | ||
Transistor Technology / Material | Si/SiC | ||||
Operating Mode | Enhancement | ||||
TJ | 150 C (302 F) |