US6M1 is a dual MOSFET device integrating an N-channel and P-channel MOSFET in a TUMT6 surface-mount package, designed for power switching and DC/DC converter applications. The N-channel MOSFET supports a drain-source voltage of 30 V and continuous drain current of ±1.4 A, while the P-channel MOSFET supports -20 V and -1 A. Both devices feature built-in gate-source protection diodes and body diodes with forward voltage of up to 1.2 V. Total power dissipation is rated at 1 W for the package, with a thermal resistance of 125 °C/W. The device operates within a channel temperature range of -55 to 150 °C.
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | US6M1 | US6M1 |
| Product Name | 4V Drive Nch + 2.5V Drive Pch MOSFET | 4V Drive Nch + 2.5V Drive Pch MOSFET |
| Polarity | N-Channel; P-Channel | N-Channel; P-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 1400 milliamps | 1400 milliamps |
| PD | 1000 milliwatts | 1000 milliwatts |
