Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ319STL-E 2SJ319STL-E

The 2SJ319STL-E is a silicon P-channel MOSFET in a DPAK(S) package, designed for high-speed power switching in applications such as switching regulators and DC-DC converters. It has a drain-source voltage rating of -200 V, a continuous drain current of -3 A, and a peak pulse current of -12 A. The device features a typical static on-state resistance of 1.7 Ω at -2 A and -10 V gate-source voltage, with a channel dissipation of 20 W at Tc = 25°C. The package dimensions are 6.5 mm × 5.6 mm, with a typical mass of 0.28 g. The part meets the DPAK(S) JEITA package code SC-63 and is supplied in tape and reel packaging. It is qualified for industrial use under standard quality grade classifications.