The US5U1 is a 2.5V drive N-channel MOSFET with a built-in Schottky barrier diode in a TUMT5 package measuring 2.0 mm by 1.3 mm. It features a drain-source voltage rating of 30 V, continuous drain current of 1.5 A, and low on-resistance of 240 mΩ at VGS=2.5 V. The integrated Schottky diode has a forward voltage of 0.36 V at 0.1 A and a reverse voltage rating of 20 V. Total power dissipation is 1.0 W when mounted on a ceramic board. The device is rated for junction and channel temperatures up to 150 °C and operates from -55 °C to 150 °C storage temperature. It supports high-speed switching with total gate charge of 2.2 nC and is designed for switching applications.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
2.5V Drive Nch+SBD MOS FET Product overview: US5U1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2.5V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-US5U1 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1278263-US5U1
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | US5U1 | US5U1 | 285-US5U1 | 1278263-US5U1 |
| Product Name | 2.5V Drive Nch+SBD MOSFET | 2.5V Drive Nch+SBD MOSFET | 2.5V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - US5U1 |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| IDSS | 1500 milliamps | 1500 milliamps | ||
| PD | 700 milliwatts | 700 milliwatts |
