The SH8K11 is a dual N-channel MOSFET in an SOP8 package designed for switching applications. It features low on-resistance with a maximum of 140 mΩ at 3.5 A and 4.0 V gate-source voltage, and a drain-source voltage rating of 30 V. Each element has a continuous drain current rating of 3.5 A and a power dissipation of 1.4 W. The package measures 4.9 mm × 6.0 mm with a height of 1.45 mm. The device includes built-in gate-source protection diodes and body diodes with a forward voltage of up to 1.2 V at 3.5 A. The channel operating temperature range is from -55 °C to 150 °C.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SH8K11 | SH8K11 |
| Product Name | 4V Drive Nch+Nch MOSFET | 4V Drive Nch+Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 3500 milliamps | 3500 milliamps |
| PD | 2000 milliwatts | 2000 milliwatts |
