SCT3160KL is a 1200 V, N-channel silicon carbide (SiC) MOSFET in a TO-247N package, designed for high-efficiency switching applications such as solar inverters, DC/DC converters, and motor drives. It has a typical on-resistance of 160 mΩ at 25°C and a continuous drain current rating of 17 A at 25°C case temperature, reducing to 12 A at 100°C. The device supports a peak pulsed drain current of 42 A and features a body diode with a reverse recovery time of 13 ns and charge of 26 nC. Gate-source voltage is rated from -4 V to +22 V, with a recommended drive voltage of 0 V/+18 V. Thermal resistance from junction to case is 1.12 to 1.46 K/W, and the device meets RoHS compliance with Pb-free lead plating. The structure enables fast switching, easy paralleling, and low switching losses.
SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Power MOSFET |
| Product Number | SCT3160KL | SCT3160KL |
| Product Name | 1200V, 17A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | N-channel Silicon Carbide Power MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | Commercial |
| Transistor Technology / Material | Silicon Carbide | |
| V(BR)DSS | 1200 volts | |
| rDS(on) | 0.1600 ohms |
