SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Power MOSFET |
| Product Number | SCT3160KL | SCT3160KL |
| Product Name | 1200V, 17A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | N-channel Silicon Carbide Power MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | Commercial |
| Transistor Technology / Material | Silicon Carbide | |
| V(BR)DSS | 1200 volts | |
| rDS(on) | 0.1600 ohms |
