CSD25304W1015 20-V P-Channel NexFET? Power MOSFET 6-DSBGA
MOSFET P-CH 20V 3A 6DSBGA
-20V, P ch NexFET MOSFET™, single WLP 1.0x1.5, 32.5mOhm 6-DSBGA Product overview: CSD25304W1015 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, 32.5mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, 32.5mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD25304W1015 can be used for catalog matching and distributor lookup.
P-Channel 20V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)
P-Channel 20V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)
P-Channel 20V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)
Manufacturer: Texas Instruments
Win Source Part Number: 803904-CSD25304W1015
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 6-DSBGA
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-UFBGA, DSBGA
Power Dissipation (Maximum): 750mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 32.5mOhm at 1.5A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 4.4nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 595pF at 10V
Current - Continuous Drain (Id) at 25°C: 3A
Vgs(th) (Maximum) at Id: 1.15V at 250μA
Maximum Vgs: ±8V
MOSFET 20V P-channel NexFET Pwr MOSFET
MOSFET P-CH 20V 3A 6DSBGA
| Texas Instruments | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD25304W1015 | CSD25304W1015 | 278-CSD25304W1015 | 296-40005-2-ND | 803904-CSD25304W1015 | CSD25304W1015 | CSD25304W1015 |
| Product Name | CSD25304W1015 CSD25304W1015 20-V P-Channel NexFET? Power MOSFET | Single FETs, MOSFETs | -20V 32.5mOhm MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - CSD25304W1015 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | -20 volts | 20 volts | |||||
| rDS(on) | 0.0325 ohms | ||||||
| QG | 3.3 nC | 4.4 nC | |||||
| Package Type | WLP 1.0x1.5 | 6-UFBGA, DSBGA | 6-UFBGA, DSBGA | SOT3 | 6-UFBGA, DSBGA |
