The BSO220N03MD-G is a dual N-channel power MOSFET designed for 5V driver applications in notebook, VGA, and POL systems. It is packaged in a PG-DSO-8 case and rated for a drain-source voltage of 30 V. The device has a maximum on-resistance of 22 mΩ at V_GS = 10 V and 27 mΩ at V_GS = 4.5 V, with a continuous drain current of 7.7 A at 25 °C. It supports a pulsed drain current of 54 A and is 100% avalanche tested with a single-pulse avalanche energy rating of 9 mJ. The MOSFET is RoHS compliant, halogen-free per IEC61249-2-21, and qualified for consumer-level applications per IEC climatic category 55/150/56.
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | BSO220N03MD-G |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSO220N03MD G |
| Polarity | N-Channel; N+N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0220 ohms |
