ALD110802PCL is a quad N-channel enhancement mode EPAD precision matched pair MOSFET array in a 16-pin plastic DIP package, measuring 9.40 to 11.68 mm in length and 5.59 to 7.11 mm in width. It features a gate threshold voltage of 0.18 to 0.22 V with a matched offset voltage of up to 10 mV and a DC current gain exceeding 10^8. Designed for sub-threshold and nanopower applications, it exhibits gate leakage current under 200 pA, input capacitance of 2.5 pF, and operates over a temperature range of 0°C to +70°C. The device is built for precision current mirrors, low-voltage analog circuits, and high-impedance buffer applications, with matched electrical characteristics across all four pairs on the same die.
MOSFET Array 4 N-Channel, Matched Pair 10.6V - 500mW Through Hole 16-PDIP
Mosfet Array 4 N-Channel, Matched Pair 10.6V 500mW Through Hole 16-PDIP
MOSFET 4N-CH 10.6V 16DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110802PCL | 1014-1020-ND | ALD110802PCL |
| Product Name | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
