Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4201-S19-AY 2SK4201-S19-AY

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 855442-2SK4201-S19-A Y Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 855442-2SK4201-S19-A Y Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095
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Datasheet
Datasheet Summary
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The 2SK4201 is an N-channel power MOSFET designed for high-current switching applications, housed in a TO-220 package with a mass of approximately 1.9 g. It has a drain-to-source voltage rating of 100 V, a continuous drain current of ±80 A, and a maximum on-state resistance of 13 mΩ at VGS = 10 V and ID = 40 A. The device features a gate-to-source threshold voltage range of 2.0 to 4.0 V, an input capacitance of 4700 pF, and a channel-to-case thermal resistance of 1.0 °C/W. It meets RoHS requirements with lead-free platinum plating and is rated for operation from −55 °C to 150 °C. The quality grade is Standard, intended for general industrial and consumer applications.

Datasheet Summary
Powered by GS/AI

The 2SK4201 is an N-channel power MOSFET designed for high-current switching applications, housed in a TO-220 package with a mass of approximately 1.9 g. It has a drain-to-source voltage rating of 100 V, a continuous drain current of ±80 A, and a maximum on-state resistance of 13 mΩ at VGS = 10 V and ID = 40 A. The device features a gate-to-source threshold voltage range of 2.0 to 4.0 V, an input capacitance of 4700 pF, and a channel-to-case thermal resistance of 1.0 °C/W. It meets RoHS requirements with lead-free platinum plating and is rated for operation from −55 °C to 150 °C. The quality grade is Standard, intended for general industrial and consumer applications.

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4201-S19-AY - 855442-2SK4201-S19-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4201-S19-AY
855442-2SK4201-S19-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4201-S19-AY 855442-2SK4201-S19-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 855442-2SK4201-S19-A Y Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095

Manufacturer: Renesas Electronics America
Win Source Part Number: 855442-2SK4201-S19-AY
Series: *
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

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Technical Specifications

  Win Source Electronics
Product Category Power MOSFET
Product Number 855442-2SK4201-S19-AY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4201-S19-AY
Package Type SOT3
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